Source Tunes From 13.6 To 14.0 GHz

Designed for high-speed frequency tuning from 13.6 to 14.0 GHz in 1-MHz steps, the THOR-14000-XA frequency synthesizer from EM Research features tuning speed of better than 400 µs from band edge to band edge and better than 300 µs from channel to channel. It is locked to an external 10-MHz reference at typical power level of 0 dBm. The frequency synthesizer delivers +7 dBm typical output power with ±2- dB output- power flatness. It features phase noise of better than −80 dBc/Hz offset 1 kHz from the carrier, better than −86 dBc/Hz offset 10 kHz from the carrier, and better than −97 dBc/Hz offset 100 kHz from the carrier. Harmonic content is better than −25 dBc while spurious content is −65 dBc or less. The frequency synthesizer draws less than 335 mA current from a +5-VDC supply. The synthesizer is designed to deliver its rated performance levels across operating temperatures from −40 to +85°C. It is supplied in a module-mount package measuring 2.5 x 1.1 x 0.4 in. with removable SMA connectors. As an option, it is available hermetically sealed per MIL-STD-883.

EM Research, Inc.
1301 Corporate Blvd.
Reno, NV 89502
(775) 345-2411
FAX: (775) 345-1030

Differential Amps Are Now Programmable

A pair of differential amplifiers with programmability has been introduced by Texas Instruments. The single-channel model LMH6881 and dual-channel model LMH682 programmable differential amplifiers (PDAs) provide optimized noise, distortion, and bandwidth characteristics over a 2.4-GHz bandwidth for a wide range of commercial and military applications. They command gain ranges from 6 to 26 dB, allowing designers to change the gain in a system without adding external components or modifying a circuit. The two PDAs are designed for consistent noise and distortion behavior over their full gain and frequency ranges, making them well suited for medical, military, wireless-communications, and test-and-measurement systems. For a 100-MHz input signal, the typical noise figure is 9.7 dB, with +44-dBm output third-order intercept point and −100 dBc third-order harmonic distortion. Gain control can be implemented via SPI bus or dedicated pins, with no external resistors needed.

Texas Instruments, Inc.
12500 TI Blvd.
Dallas, TX 75243
(972) 995-2011

GaN Amplifier Powers 9.9 To 10.7 GHz

Model AML910P4215 is a high-efficiency power amplifier based on gallium-nitride (GaN) semiconductor technology. It delivers 15 W output power from a package measuring just 3.8 x 3.6 x 0.67 in. The GaN amplifier achieves power-added efficiency (PAE) of typically 30% with minimum small-signal gain of 46 dB across the full operating band of 9.9 to 10.7 GHz. The rugged amplifier features a fast TTL controlled muting function (with 200-ns on/off switching speed) and operates from a +32-VDC supply. It is supplied in hermetically sealed aluminum housing with field-removable female SMA connectors. It is designed for operating temperatures from −40 to +85°C.

Microsemi Corp.
1000 Avenida Acaso
Camarillo, CA 93012
(805) 388-1345
FAX: (805) 484-2191