Space is a harsh environment, and radiation in space can disrupt the operation of any number of high-frequency components. But certain components—such as the model PE95421 high-reliability (hi-rel) single-pole, double-throw (SPDT) RF switch from fabless semiconductor company Peregrine Semiconductor Corp.—are designed and fabricated in such a way as to be enhanced-low-dose-rate-sensitivity-free (ELDRS-free), resistant to single-event radiation, and capable of handling a total ionizing dose (TID) of radiation of 100 krad without disruption in service. The model PE95421 is an absorptive/non-reflective switch with low loss and high isolation from 1 to 8500 MHz, based on the firm’s UltraCMOS® silicon semiconductor process and HaRP™ technology.

The model PE95421 hi-rel SPDT switch (see figure) is fabricated on a highly insulating sapphire substrate, making it immune to radiation-induced single-event-latchup (SEL) effects. The switch minimizes performance drift even under radiation-dose conditions to 100 krads. It achieves excellent numbers for two key performance parameters—insertion loss and isolation. The tested insertion loss is only 0.85 dB at 1 GHz, while the measured isolation is typically 55 dB (also at 1 GHz). The insertion loss ranges from 0.77 dB at 100 MHz through about 1.38 dB at 8.5 GHz. Isolation extends from 86.5 dB at 100 MHz to 27.8 dB at 8.5 GHz. The switch offers electrostatic discharge (ESD) tolerance to 1000 V per the human body model (HBM).

The hi-rel SPDT switch supports circuits with high linearity, handling 2 W (+33 dBm) typical input power at 2 GHz at 1-dB compression. The typical third-order-intercept point (IIP3) is +60 dBm at 2 GHz. The rugged switch, which is supplied in a seven-lead QQFP housing, measures 66.6 x 5.5 mm. It can be used with drain voltages from +3.0 to +3.6 VDC and typically draws 100 μA drain current.

As if this hi-rel switch wasn’t enough, Peregrine recently introduced a pair of lower-frequency switches for use in public safety and military radios at the IEEE International Microwave Symposium (IMS) in Seattle, WA. Models PE42850 and PE42851 are single-pole, five-throw (SP5T) switches that also combine the company’s UltraCMOS and HaRP technologies to achieve impressive RF/microwave switch performance. Each switch is RoHS compliant and supplied in a 5 x 5 mm, 32-lead QFN package; either one can be configured as a single-pole, three-throw (SP3T) component for flexibility. Both deliver high ESD performance of 1.5 kV HBM. Both provide low power consumption for extended battery life in portable applications.

Model PE42850 is usable from 30 to 1000 MHz, with only 0.35 dB insertion loss at 1 GHz and 36 dB isolation at 520 MHz. It offers a 1-dB compression point of typically +45.5 dBm, and can switch signals with power levels to 17 W with high linearity. It operates from supply voltages of +2.3 to +5.5 VDC and typically draws only 130 {LC MU}A current. Similarly, model PE42851 is usable from 100 to 1000 MHz, with only 0.4 dB insertion loss at 1 GHz and 36 dB isolation at 520 MHz. It also reaches a 1-dB compression point of +45.5 dBm, drawing about 130 μA current from a drain voltage of +2.3 to +5.5 VDC. Both SP5T switches are supplied in 32-lead QFN housings measuring just 5 x 5 mm.

Peregrine Semiconductor Corp., 9380 Carroll Park Dr., San Diego, CA 92121; (858) 731-9400, FAX: (858) 731-9499.